Programming sequence in NAND memory

ABSTRACT

An analog voltage NAND architecture non-volatile memory device and programming process is described that reduce the effects of NAND string resistance in source follower sensing by programming the cells in NAND memory cell strings to maintain the resistance presented by the unselected cells on the source-side of a given selected memory cell of the NAND string during both the verify and read. In particular, in one embodiment of the present invention, the cells in the NAND string are programmed sequentially in order from the cells closest the bit line to the final cell that is closest the source line in the string. This allows the source follower sensing of the verify and later read operations to read the programmed threshold voltage across the same stable source-side resistance  602 , as the source-side unselected memory cells  208   31 - 208   N+1  will already have been programmed and thus will present the same channel resistance to both the source follower verify of the program operation and following source follower read operations, maintaining the compensation for the source-side resistance  602  of the source-side unselected memory cells  208   31 - 208   N+1 .

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory, and inparticular, the present disclosure relates to solid state non-volatilememory devices and systems utilizing analog signals to communicate datavalues of two or more bits of information.

BACKGROUND

Electronic devices commonly have some type of bulk storage deviceavailable to them. A common example is a hard disk drive (HDD). HDDs arecapable of large amounts of storage at relatively low cost, with currentconsumer HDDs available with over one terabyte of capacity.

HDDs generally store data on rotating magnetic media or platters. Datais typically stored as a pattern of magnetic flux reversals on theplatters. To write data to a typical HDD, the platter is rotated at highspeed while a write head floating above the platter generates a seriesof magnetic pulses to align magnetic particles on the platter torepresent the data. To read data from a typical HDD, resistance changesare induced in a magnetoresistive read head as it floats above theplatter rotated at high speed. In practice, the resulting data signal isan analog signal whose peaks and valleys are the result of the magneticflux reversals of the data pattern. Digital signal processing techniquescalled partial response maximum likelihood (PRML) are then used tosample the analog data signal to determine the likely data patternresponsible for generating the data signal.

HDDs have certain drawbacks due to their mechanical nature. HDDs aresusceptible to damage or excessive read/write errors due to shock,vibration or strong magnetic fields. In addition, they are relativelylarge users of power in portable electronic devices.

Another example of a bulk storage device is a solid state drive (SSD).Instead of storing data on rotating media, SSDs utilize semiconductormemory devices to store their data, but include an interface and formfactor making them appear to their host system as if they are a typicalHDD. The memory devices of SSDs are typically non-volatile flash memorydevices.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage of the cells, through programming of chargestorage or trapping layers or other physical phenomena, determine thedata value of each cell. Common uses for flash memory and othernon-volatile memory include personal computers, personal digitalassistants (PDAs), digital cameras, digital media players, digitalrecorders, games, appliances, vehicles, wireless devices, mobiletelephones, and removable memory modules, and the uses for non-volatilememory continue to expand.

Unlike HDDs, the operation of SSDs is generally not subject tovibration, shock or magnetic field concerns due to their solid statenature. Similarly, without moving parts, SSDs have lower powerrequirements than HDDs. However, SSDs currently have much lower storagecapacities compared to HDDs of the same form factor and a significantlyhigher cost per bit.

For the reasons stated above, and for other reasons which will becomeapparent to those skilled in the art upon reading and understanding thepresent specification, there is a need in the art for alternative bulkstorage options.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory device according to anembodiment of the disclosure.

FIG. 2 is a schematic of a portion of an example NAND memory array asmight be found in the memory device of FIG. 1.

FIG. 3 is a block schematic of a solid state bulk storage device inaccordance with one embodiment of the present disclosure.

FIG. 4 is a depiction of a wave form showing conceptually a data signalas might be received from the memory device by a read/write channel inaccordance with an embodiment of the disclosure.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure.

FIGS. 6A-6B show diagrams detailing NAND array programming order andvoltage sensing in accordance with embodiments of the present invention.

DETAILED DESCRIPTION

In the following detailed description of the present embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the embodiments may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process, electrical or mechanical changes may be madewithout departing from the scope of the present disclosure. Thefollowing detailed description is, therefore, not to be taken in alimiting sense.

Traditional solid-state memory devices pass data in the form of binarysignals. Typically, a ground potential represents a first logic level ofa bit of data, e.g., a ‘0’ data value, while a supply potentialrepresents a second logic level of a bit of data, e.g., a ‘1’ datavalue. A multi-level cell (MLC) may be assigned, for example, fourdifferent threshold voltage (Vt) ranges of 200 mV for each range, witheach range corresponding to a distinct data state, thereby representingfour data values or bit patterns. Typically, a dead space or margin of0.2V to 0.4V is between each range to keep the Vt distributions fromoverlapping. If the Vt of the cell is within the first range, the cellmay be deemed to store a logical 11 state and is typically consideredthe erased state of the cell. If the Vt is within the second range, thecell may be deemed to store a logical 10 state. If the Vt is within thethird range, the cell may be deemed to store a logical 00 state. And ifthe Vt is within the fourth range, the cell may be deemed to store alogical 01 state.

When programming a traditional MLC device as described above, cells aregenerally first erased, as a block, to correspond to the erased state.Following erasure of a block of cells, the least-significant bit (LSB)of each cell is first programmed, if necessary. For example, if the LSBis a 1, then no programming is necessary, but if the LSB is a 0, thenthe Vt of the target memory cell is moved from the Vt rangecorresponding to the 11 logic state to the Vt range corresponding to the10 logic state. Following programming of the LSBs, the most-significantbit (MSB) of each cell is programmed in a similar manner, shifting theVt where necessary. When reading an MLC of a traditional memory device,one or more read operations determine generally into which of the rangesthe Vt of the cell voltage falls. For example, a first read operationmay determine whether the Vt of the target memory cell is indicative ofthe MSB being a 1 or a 0 while a second read operation may determinewhether the Vt of the target memory cell in indicative of the LSB beinga 1 or a 0. In each case, however, a single bit is returned from a readoperation of a target memory cell, regardless of how many bits arestored on each cell. This problem of multiple program and readoperations becomes increasingly troublesome as more bits are stored oneach MLC. Because each such program or read operation is a binaryoperation, i.e., each programs or returns a single bit of informationper cell, storing more bits on each MLC leads to longer operation times.

The memory devices of an illustrative embodiment store data as Vt rangeson the memory cells. In contrast to traditional memory devices, however,program and read operations are capable of utilizing data signals not asdiscrete bits of MLC data values, but as full representations of MLCdata values, such as their complete bit patterns. For example, in atwo-bit MLC device, instead of programming a cell's LSB and subsequentlyprogramming that cell's MSB, a target threshold voltage may beprogrammed representing the bit pattern of those two bits. That is, aseries of program and verify operations would be applied to a memorycell until that memory cell obtained its target threshold voltage ratherthan programming to a first threshold voltage for a first bit, shiftingto a second threshold voltage for a second bit, etc. Similarly, insteadof utilizing multiple read operations to determine each bit stored on acell, the threshold voltage of the cell may be determined and passed asa single signal representing the complete data value or bit pattern ofthe cell. The memory devices of the various embodiments do not merelylook to whether a memory cell has a threshold voltage above or belowsome nominal threshold voltage as is done in traditional memory devices.Instead, a voltage signal is generated that is representative of theactual threshold voltage of that memory cell across the continuum ofpossible threshold voltages. An advantage of this approach becomes moresignificant as the bits per cell count is increased. For example, if thememory cell were to store eight bits of information, a single readoperation would return a single analog data signal representative ofeight bits of information.

FIG. 1 is a simplified block diagram of a memory device 101 according toan embodiment of the disclosure. Memory device 101 includes an array ofmemory cells 104 arranged in rows and columns. Although the variousembodiments will be described primarily with reference to NAND memoryarrays, the various embodiments are not limited to a specificarchitecture of the memory array 104. Some examples of other arrayarchitectures suitable for the present embodiments include NOR arrays,AND arrays, and virtual ground arrays. In general, however, theembodiments described herein are adaptable to any array architecturepermitting generation of a data signal indicative of the thresholdvoltage of each memory cell.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals provided to the memory device 101.Address signals are received and decoded to access memory array 104.Memory device 101 also includes input/output (I/O) control circuitry 112to manage input of commands, addresses and data to the memory device 101as well as output of data and status information from the memory device101. An address register 114 is coupled between I/O control circuitry112 and row decode circuitry 108 and column decode circuitry 110 tolatch the address signals prior to decoding. A command register 124 iscoupled between I/O control circuitry 112 and control logic 116 to latchincoming commands. Control logic 116 controls access to the memory array104 in response to the commands and generates status information for theexternal processor 130. The control logic 116 is coupled to row decodecircuitry 108 and column decode circuitry 110 to control the row decodecircuitry 108 and column decode circuitry 110 in response to theaddresses.

Control logic 116 is also coupled to a sample and hold circuitry 118.The sample and hold circuitry 118 latches data, either incoming oroutgoing, in the form of analog voltage levels. For example, the sampleand hold circuitry could contain capacitors or other analog storagedevices for sampling either an incoming voltage signal representing datato be written to a memory cell or an outgoing voltage signal indicativeof the threshold voltage sensed from a memory cell. The sample and holdcircuitry 118 may further provide for amplification and/or buffering ofthe sampled voltage to provide a stronger data signal to an externaldevice.

The handling of analog voltage signals may take an approach similar toan approach well known in the area of CMOS imager technology, wherecharge levels generated at pixels of the imager in response to incidentillumination are stored on capacitors. These charge levels are thenconverted to voltage signals using a differential amplifier with areference capacitor as a second input to the differential amplifier. Theoutput of the differential amplifier is then passed to analog-to-digitalconversion (ADC) devices to obtain a digital value representative of anintensity of the illumination. In the present embodiments, a charge maybe stored on a capacitor in response to subjecting it to a voltage levelindicative of an actual or target threshold voltage of a memory cell forreading or programming, respectively, the memory cell. This charge couldthen be converted to an analog voltage using a differential amplifierhaving a grounded input or other reference signal as a second input. Theoutput of the differential amplifier could then be passed to the I/Ocontrol circuitry 112 for output from the memory device, in the case ofa read operation, or used for comparison during one or more verifyoperations in programming the memory device. It is noted that the I/Ocontrol circuitry 112 could optionally include analog-to-digitalconversion functionality and digital-to-analog conversion (DAC)functionality to convert read data from an analog signal to a digitalbit pattern and to convert write data from a digital bit pattern to ananalog signal such that the memory device 101 could be adapted forcommunication with either an analog or digital data interface.

During a write operation, target memory cells of the memory array 104are programmed until voltages indicative of their Vt levels match thelevels held in the sample and hold circuitry 118. This can beaccomplished, as one example, using differential sensing devices tocompare the held voltage level to a threshold voltage of the targetmemory cell. Much like traditional memory programming, programmingpulses could be applied to a target memory cell to increase itsthreshold voltage until reaching or exceeding the desired value. In aread operation, the Vt levels of the target memory cells are passed tothe sample and hold circuitry 118 for transfer to an external processor(not shown in FIG. 1) either directly as analog signals or as digitizedrepresentations of the analog signals depending upon whether ADC/DACfunctionality is provided external to, or within, the memory device.

Threshold voltages of cells may be determined in a variety of manners.For example, a word line voltage could be sampled at the point when thetarget memory cell becomes activated. Alternatively, a boosted voltagecould be applied to a first source/drain side of a target memory cell,and the threshold voltage could be taken as a difference between itscontrol gate voltage and the voltage at its other source/drain side. Bycoupling the voltage to a capacitor, charge would be shared with thecapacitor to store the sampled voltage. Note that the sampled voltageneed not be equal to the threshold voltage, but merely indicative ofthat voltage. For example, in the case of applying a boosted voltage toa first source/drain side of the memory cell and a known voltage to itscontrol gate, the voltage developed at the second source/drain side ofthe memory cell could be taken as the data signal as the developedvoltage is indicative of the threshold voltage of the memory cell.

Sample and hold circuitry 118 may include caching, i.e., multiplestorage locations for each data value, such that the memory device 101may be reading a next data value while passing a first data value to theexternal processor, or receiving a next data value while writing a firstdata value to the memory array 104. A status register 122 is coupledbetween I/O control circuitry 112 and control logic 116 to latch thestatus information for output to the external processor.

Memory device 101 receives control signals at control logic 116 over acontrol link 132. The control signals may include a chip enable CE#, acommand latch enable CLE, an address latch enable ALE, and a writeenable WE#. Memory device 101 may receive commands (in the form ofcommand signals), addresses (in the form of address signals), and data(in the form of data signals) from an external processor over amultiplexed input/output (I/O) bus 134 and output data to the externalprocessor over I/O bus 134.

In a specific example, commands are received over input/output (I/O)pins [7:0] of I/O bus 134 at I/O control circuitry 112 and are writteninto command register 124. The addresses are received over input/output(I/O) pins [7:0] of bus 134 at I/O control circuitry 112 and are writteninto address register 114. The data may be received over input/output(I/O) pins [7:0] for a device capable of receiving eight parallelsignals, or input/output (I/O) pins [15:0] for a device capable ofreceiving sixteen parallel signals, at I/O control circuitry 112 and aretransferred to sample and hold circuitry 118. Data also may be outputover input/output (I/O) pins [7:0] for a device capable of transmittingeight parallel signals or input/output (I/O) pins [15:0] for a devicecapable of transmitting sixteen parallel signals. It will be appreciatedby those skilled in the art that additional circuitry and signals can beprovided, and that the memory device of FIG. 1 has been simplified tohelp focus on the embodiments of the disclosure. Additionally, while thememory device of FIG. 1 has been described in accordance with popularconventions for receipt and output of the various signals, it is notedthat the various embodiments are not limited by the specific signals andI/O configurations described unless expressly noted herein. For example,command and address signals could be received at inputs separate fromthose receiving the data signals, or data signals could be transmittedserially over a single I/O line of I/O bus 134. Because the data signalsrepresent bit patterns instead of individual bits, serial communicationof an 8-bit data signal could be as efficient as parallel communicationof eight signals representing individual bits.

FIG. 2 is a schematic of a portion of an example NAND memory array 200as might be found in the memory array 104 of FIG. 1. As shown in FIG. 2,the memory array 200 includes word lines 202 ₁ to 202 _(N) andintersecting bit lines 204 ₁ to 204 _(M). For ease of addressing in thedigital environment, the number of word lines 202 and the number of bitlines 204 are generally each some power of two.

Memory array 200 includes NAND strings 206 ₁ to 206 _(M). Each NANDstring includes transistors 208 ₁ to 208 _(N), each located at anintersection of a word line 202 and a bit line 204. The transistors 208,depicted as floating-gate transistors in FIG. 2, represent non-volatilememory cells for storage of data. The floating-gate transistors 208 ofeach NAND string 206 are connected in series source to drain between oneor more source select gates 210, e.g., a field-effect transistor (FET),and one or more drain select gates 212, e.g., an FET. Each source selectgate 210 is located at an intersection of a local bit line 204 and asource select line 214, while each drain select gate 212 is located atan intersection of a local bit line 204 and a drain select line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate of each source selectgate 210 is connected to source select line 214. If multiple sourceselect gates 210 are utilized for a given NAND string 206, they would becoupled in series between the common source line 216 and the firstfloating-gate transistor 208 of that NAND string 206.

The drain of each drain select gate 212 is connected to a local bit line204 for the corresponding NAND string at a drain contact. For example,the drain of drain select gate 212, is connected to the local bit line204 ₁ for the corresponding NAND string 206 ₁ at a drain contact. Thesource of each drain select gate 212 is connected to the drain of thelast floating-gate transistor 208 of the corresponding NAND string 206.For example, the source of drain select gate 212 ₁ is connected to thedrain of floating-gate transistor 208 _(N) of the corresponding NANDstring 206 ₁. If multiple drain select gates 212 are utilized for agiven NAND string 206, they would be coupled in series between thecorresponding bit line 204 and the last floating-gate transistor 208_(N) of that NAND string 206.

Typical construction of floating-gate transistors 208 includes a source230 and a drain 232, a floating gate 234, and a control gate 236, asshown in FIG. 2. Floating-gate transistors 208 have their control gates236 coupled to a word line 202. A column of the floating-gatetransistors 208 are those NAND strings 206 coupled to a given local bitline 204. A row of the floating-gate transistors 208 are thosetransistors commonly coupled to a given word line 202. Other forms oftransistors 208 may also be utilized with embodiments of the disclosure,such as NROM, magnetic or ferroelectric transistors and othertransistors capable of being programmed to assume one of two or morethreshold voltage ranges.

Memory devices of the various embodiments may be advantageously used inbulk storage devices. For various embodiments, these bulk storagedevices may take on the same form factor and communication bus interfaceof traditional HDDs, thus allowing them to replace such drives in avariety of applications. Some common form factors for HDDs include the3.5″, 2.5″ and PCMCIA (Personal Computer Memory Card InternationalAssociation) form factors commonly used with current personal computersand larger digital media recorders, as well as 1.8″ and 1″ form factorscommonly used in smaller personal appliances, such as mobile telephones,personal digital assistants (PDAs) and digital media players. Somecommon bus interfaces include universal serial bus (USB), AT attachmentinterface (ATA) [also known as integrated drive electronics or IDE],serial ATA (SATA), small computer systems interface (SCSI) and theInstitute of Electrical and Electronics Engineers (IEEE) 1394 standard.While a variety of form factors and communication interfaces werelisted, the embodiments are not limited to a specific form factor orcommunication standard. Furthermore, the embodiments need not conform toa HDD form factor or communication interface. FIG. 3 is a blockschematic of a solid state bulk storage device 300 in accordance withone embodiment of the present disclosure.

The bulk storage device 300 includes a memory device 301 in accordancewith an embodiment of the disclosure, a read/write channel 305 and acontroller 310. The read/write channel 305 provides foranalog-to-digital conversion of data signals received from the memorydevice 301 as well as digital-to-analog conversion of data signalsreceived from the controller 310. The controller 310 provides forcommunication between the bulk storage device 300 and an externalprocessor (not shown in FIG. 3) through bus interface 315. It is notedthat the read/write channel 305 could service one or more additionalmemory devices, as depicted by memory device 301′ in dashed lines.Selection of a single memory device 301 for communication can be handledthrough a multi-bit chip enable signal or other multiplexing scheme.

The memory device 301 is coupled to a read/write channel 305 through ananalog interface 320 and a digital interface 325. The analog interface320 provides for the passage of analog data signals between the memorydevice 301 and the read/write channel 305 while the digital interface325 provides for the passage of control signals, command signals andaddress signals from the read/write channel 305 to the memory device301. The digital interface 325 may further provide for the passage ofstatus signals from the memory device 301 to the read/write channel 305.The analog interface 320 and the digital interface 325 may share signallines as noted with respect to the memory device 101 of FIG. 1. Althoughthe embodiment of FIG. 3 depicts a dual analog/digital interface to thememory device, functionality of the read/write channel 305 couldoptionally be incorporated into the memory device 301 as discussed withrespect to FIG. 1 such that the memory device 301 communicates directlywith the controller 310 using only a digital interface for passage ofcontrol signals, command signals, status signals, address signals anddata signals.

The read/write channel 305 is coupled to the controller 310 through oneor more interfaces, such as a data interface 330 and a control interface335. The data interface 330 provides for the passage of digital datasignals between the read/write channel 305 and the controller 310. Thecontrol interface 335 provides for the passage of control signals,command signals and address signals from the controller 310 to theread/write channel 305. The control interface 335 may further providefor the passage of status signals from the read/write channel 305 to thecontroller 310. Status and command/control signals may also be passeddirectly between the controller 310 and the memory device 301 asdepicted by the dashed line connecting the control interface 335 to thedigital interface 325.

Although depicted as two distinct devices in FIG. 3, the functionalityof the read/write channel 305 and the controller 310 could alternativelybe performed by a single integrated circuit device. And whilemaintaining the memory device 301 as a separate device would providemore flexibility in adapting the embodiments to different form factorsand communication interfaces, because it is also an integrated circuitdevice, the entire bulk storage device 300 could be fabricated as asingle integrated circuit device.

The read/write channel 305 is a signal processor adapted to at leastprovide for conversion of a digital data stream to an analog data streamand vice versa. A digital data stream provides data signals in the formof binary voltage levels, i.e., a first voltage level indicative of abit having a first binary data value, e.g., 0, and a second voltagelevel indicative of a bit having a second binary data value, e.g., 1. Ananalog data stream provides data signals in the form of analog voltageshaving more than two levels, with different voltage levels or rangescorresponding to different bit patterns of two or more bits. Forexample, in a system adapted to store two bits per memory cell, a firstvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 11, a second voltage level or range ofvoltage levels of an analog data stream could correspond to a bitpattern of 10, a third voltage level or range of voltage levels of ananalog data stream could correspond to a bit pattern of 00 and a fourthvoltage level or range of voltage levels of an analog data stream couldcorrespond to a bit pattern of 01. Thus, one analog data signal inaccordance with the various embodiments would be converted to two ormore digital data signals, and vice versa.

In practice, control and command signals are received at the businterface 315 for access of the memory device 301 through the controller310. Addresses and data values may also be received at the bus interface315 depending upon what type of access is desired, e.g., write, read,format, etc. In a shared bus system, the bus interface 315 would becoupled to a bus along with a variety of other devices. To directcommunications to a specific device, an identification value may beplaced on the bus indicating which device on the bus is to act upon asubsequent command. If the identification value matches the value takenon by the bulk storage device 300, the controller 310 would then acceptthe subsequent command at the bus interface 315. If the identificationvalue did not match, the controller 310 would ignore the subsequentcommunication. Similarly, to avoid collisions on the bus, the variousdevices on a shared bus may instruct other devices to cease outboundcommunication while they individually take control of the bus. Protocolsfor bus sharing and collision avoidance are well known and will not bedetailed herein. The controller 310 then passes the command, address anddata signals on to the read/write channel 305 for processing. Note thatthe command, address and data signals passed from the controller 310 tothe read/write channel 305 need not be the same signals received at thebus interface 315. For example, the communication standard for the businterface 315 may differ from the communication standard of theread/write channel 305 or the memory device 301. In this situation, thecontroller 310 may translate the commands and/or addressing scheme priorto accessing the memory device 301. In addition, the controller 310 mayprovide for load leveling within the one or more memory devices 301,such that physical addresses of the memory devices 301 may change overtime for a given logical address. Thus, the controller 310 would map thelogical address from the external device to a physical address of atarget memory device 301.

For write requests, in addition to the command and address signals, thecontroller 310 would pass digital data signals to the read/write channel305. For example, for a 16-bit data word, the controller 310 would pass16 individual signals having a first or second binary logic level. Theread/write channel 305 would then convert the digital data signals to ananalog data signal representative of the bit pattern of the digital datasignals. To continue with the foregoing example, the read/write channel305 would use a digital-to-analog conversion to convert the 16individual digital data signals to a single analog signal having apotential level indicative of the desired 16-bit data pattern. For oneembodiment, the analog data signal representative of the bit pattern ofthe digital data signals is indicative of a desired threshold voltage ofthe target memory cell. However, in programming of a one-transistormemory cells, it is often the case that programming of neighboringmemory cells will increase the threshold voltage of previouslyprogrammed memory cells. Thus, for another embodiment, the read/writechannel 305 can take into account these types of expected changes in thethreshold voltage, and adjust the analog data signal to be indicative ofa threshold voltage lower than the final desired threshold voltage.After conversion of the digital data signals from the controller 310,the read/write channel 305 would then pass the write command and addresssignals to the memory device 301 along with the analog data signals foruse in programming the individual memory cells. Programming can occur ona cell-by-cell basis, but is generally performed for a page of data peroperation. For a typical memory array architecture, a page of dataincludes every other memory cell coupled to a word line.

For read requests, the controller would pass command and address signalsto the read/write channel 305. The read/write channel 305 would pass theread command and address signals to the memory device 301. In response,after performing the read operation, the memory device 301 would returnthe analog data signals indicative of the threshold voltages of thememory cells defined by the address signals and the read command. Thememory device 301 may transfer its analog data signals in parallel orserial fashion.

The analog data signals may also be transferred not as discrete voltagepulses, but as a substantially continuous stream of analog signals. Inthis situation, the read/write channel 305 may employ signal processingsimilar to that used in HDD accessing called PRML or partial response,maximum likelihood. In PRML processing of a traditional HDD, the readhead of the HDD outputs a stream of analog signals representative offlux reversals encountered during a read operation of the HDD platter.Rather than attempting to capture the true peaks and valleys of thisanalog signal generated in response to flux reversals encountered by theread head, the signal is periodically sampled to create a digitalrepresentation of the signal pattern. This digital representation canthen be analyzed to determine the likely pattern of flux reversalsresponsible for generation of the analog signal pattern. This same typeof processing can be utilized with embodiments of the presentdisclosure. By sampling the analog signal from the memory device 301,PRML processing can be employed to determine the likely pattern ofthreshold voltages responsible for generation of the analog signal.

FIG. 4 is a depiction of a wave form showing conceptually a data signal450 as might be received from the memory device 301 by the read/writechannel 305 in accordance with an embodiment of the disclosure. The datasignal 450 could be periodically sampled and a digital representation ofthe data signal 450 can be created from the amplitudes of the sampledvoltage levels. For one embodiment, the sampling could be synchronizedto the data output such that sampling occurs during the steady-stateportions of the data signal 450. Such an embodiment is depicted by thesampling as indicated by the dashed lines at times t1, t2, t3 and t4.However, if synchronized sampling becomes misaligned, values of the datasamples may be significantly different than the steady-state values. Inan alternate embodiment, sampling rates could be increased to allowdetermination of where steady-state values likely occurred, such as byobserving slope changes indicated by the data samples. Such anembodiment is depicted by the sampling as indicated by the dashed linesat times t5, t6, t7 and t8, where a slope between data samples at timest6 and t7 may indicate a steady-state condition. In such an embodiment,a trade-off is made between sampling rate and accuracy of therepresentation. Higher sampling rates lead to more accuraterepresentations, but also increase processing time. Regardless ofwhether sampling is synchronized to the data output or more frequentsampling is used, the digital representation can then be used to predictwhat incoming voltage levels were likely responsible for generating theanalog signal pattern. In turn, the likely data values of the individualmemory cells being read can be predicted from this expected pattern ofincoming voltage levels.

Recognizing that errors will occur in the reading of data values fromthe memory device 301, the read/write channel 305 may include errorcorrection. Error correction is commonly used in memory devices, as wellas HDDs, to recover from expected errors. Typically, a memory devicewill store user data in a first set of locations and error correctioncode (ECC) in a second set of locations. During a read operation, boththe user data and the ECC are read in response to a read request of theuser data. Using known algorithms, the user data returned from the readoperation is compared to the ECC. If the errors are within the limits ofthe ECC, the errors will be corrected.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure. Example electronic systems may includepersonal computers, PDAs, digital cameras, digital media players,digital recorders, electronic games, appliances, vehicles, wirelessdevices, mobile telephones and the like.

The electronic system includes a host processor 500 that may includecache memory 502 to increase the efficiency of the processor 500. Theprocessor 500 is coupled to a communication bus 504. A variety of otherdevices may be coupled to the communication bus 504 under control of theprocessor 500. For example, the electronic system may include randomaccess memory (RAM) 506; one or more input devices 508 such askeyboards, touch pads, pointing devices, etc.; an audio controller 510;a video controller 512; and one or more bulk storage devices 514. Atleast one bulk storage device 514 includes a digital bus interface 515for communication with the bus 504, one or more memory devices inaccordance with an embodiment of the disclosure having an analoginterface for transfer of data signals representative of data patternsof two or more bits of data, and a signal processor adapted to performdigital-to-analog conversion of digital data signals received from thebus interface 515 and analog-to-digital conversion of analog datasignals received from its memory device(s).

Programming Sequence in a Source Follower Read Mode

As stated above, sensing threshold voltages of memory cells of memoriescan be accomplished in multiple manners. In particular, one such methodof analog sensing of memory cells in NAND architecture non-volatilememory devices and arrays is detailed in U.S. patent application Ser.No. 11/975,204, titled “SENSING OF MEMORY CELLS IN NAND FLASH,” filedOct. 18, 2007, which is commonly assigned.

In source follower read mode sensing one or more embodiments, a passvoltage (Vpass) is applied to the unselected word lines of a NAND memorycell string to operate the unselected transistors as pass transistorswhile a boosted voltage (Vsource, such as Vcc+) is applied to the sourceline of the NAND string. A voltage (Vout) is then expressed on a coupledbit line by the target memory cell. The bit line voltage (Vout) set bythe target memory cell should then be the control gate voltage (Vg) ofthe target memory cell minus the programmed threshold voltage (Vt) ofthe target memory cell (Vout=Vg−Vt). The threshold voltage of the targetmemory cell can then be determined as the difference between the controlgate voltage (Vg) and the voltage (Vout) expressed on the coupled bitline, Vt=Vg−Vout. In addition, it is noted that in alternateembodiments, the bit line can also be precharged to a known prechargevoltage level before being coupled to the NAND string, such as to aidesensing speed and accuracy.

FIG. 6A details a read mode in a NAND architecture Flash memory. In FIG.6A, a NAND memory string of an array contains a series of memory cells208 ₀-208 ₃₁ that are coupled together source to drain to form the NANDstring, and which are selectively coupled to bit line 204 and sourceline 216. It is noted that, while the NAND string of FIG. 6A is detailedas having 32 cells in it, NAND strings can have differing numbers ofcells, including, but not limited to, 8, 16, 32, 64, or more cells. Asdescribed above, each memory cell FET 208 _(X) has a gate-insulatorstack formed over a channel region. The word lines 202 _(X) coupleacross the NAND strings of the array, coupling the control gates ofadjacent memory cells 208 _(X) and enabling a single memory cell 208_(X) in each of the memory strings to be selected. In each NAND memorystring, impurity (N+ typically for N-FET based floating gate memorycells, P+ for P-FET based cells) doped regions are formed between eachgate insulator stack to form the source and drain regions of theadjacent memory cells 208 _(X) of the string, which additionally operateas connectors to couple the cells of the NAND string together. Each NANDmemory string is coupled to select gates 210, 212 that are formed ateither end of each NAND string and selectively couple the string to abit line 204 and a source line 216.

In a source follower sense or read operation, an elevated read passvoltage (Vpass, such as Vcc or higher) is coupled to the word lines ofthe unselected memory cells (208 ₃₁-208 _(N+1), 208 _(N−1)-208 ₀,coupled to word lines 202 ₃₁-202 _(N+1), 202 _(N−1)-202 ₀), allowing theunselected cells to pass current in a manner that is unrestricted bytheir programmed threshold voltages/stored data values. An elevatedvoltage, Vsource, (such as Vcc or higher) is applied to the source line216. Select gate voltages (V_(SGD) and V_(SGS)) are also applied to thegates of the select gate transistors, coupling the NAND string to thesource line 216 and bit line 204, respectively. A read gate voltage (Vg)is applied to the word line 202 _(N) connected to the control gate ofthe selected memory cell 208 _(N), placing it in an active mode ofoperation. Current (I bias) then flows through the NAND string from thesource line 216 to the bit line 204 through the selected memory cell 208_(N), raising the voltage (Vout) of the bit line 204 to that of the readgate voltage minus the programmed threshold voltage (Vout=Vg−Vt, suchthat Vt=Vg−Vout) of the selected cell 208 _(N). As the applied read gatevoltage is known, the threshold voltage (Vt) of the selected cell 208_(N) can be directly sensed from the bit line 204, or sampled by ananalog to digital converter (ADC) or sampled and held by a capacitor ina sample and hold circuit 118 for comparison or transfer from the memorydevice.

However, a potential problem with such source follower sensing is thatthe unselected memory cells (208 ₃₁-208 _(N+1) on the source-side of theselected memory cell 208 _(N), and 208 _(N−1)-208 ₀ on the drain-side)may not act as perfect pass gates and could introduce an additionalvoltage drop into the sensing operation, such as that due to theirinternal channel resistance. As shown in FIG. 6B, the unselected cells(208 ₃₁-208 _(N+1) and 208 _(N−1)-208 ₀) of the memory string can berepresented as resistances 602, 604 placed both above and below theselected memory cell 208 _(N). In a source follower sensing operation,the selected memory cell of the NAND string acts as a source followeramplifier. Thus, the source-side resistance 602, emanating from thechannel resistance of the source-side unselected memory cells 208 ₃₁-208_(N+1), will induce a sensing error due to the IR voltage drop acrossthe source-side resistance 602. Sensing errors from the channelresistance of the unselected cells will be predominately due tosource-side resistance 602, while drain-side resistance 604 will onlyhave a minor or secondary effect. The voltage expressed on the bit line204 can thus be approximated as that of the applied read gate voltage(Vg) applied to the selected memory cell minus the programmed thresholdvoltage (Vt) of the selected memory cell minus the IR voltage drop(Rsource-side*I bias) of the source-side unselected cells(Vout=Vg−Vt−Rsource-side*I bias), if one ignores the sensing error ofthe smaller IR drop of the drain-side unselected memory cells 208_(N−1)-208 ₀.

It is noted that the threshold voltage programmed into the selectedmemory cell can therefore be compensated to account for this inherentunselected cell NAND string resistance by utilizing the same sensingmethod for verification as used in reading the memory cell, so that theselected memory cell is programmed such that it compensates for NANDstring resistance and the voltage read/verified on the bit linecorresponds to the target voltage being programmed. Thus, the selectedmemory cell should be programmed such that Vtarget=Vg−Vout=Vt+Ibias*Rsource-side.

As stated above, this programming can be accomplished by programmingmemory cells by applying a programming voltage or series of programmingvoltage pulses to the control gates of the selected memory cells of oneor more NAND strings to store charge in their floating gates. Theprogrammed threshold voltages are then verified against the targetvoltage levels stored in the sample and hold circuit 118 in a verifyoperation. The memory cells that are at or over their target voltage canbe inhibited from further programming by the application of an elevatedvoltage to their channels (such as through the coupled bit line 204),while the cells that failed verification (had a Vt that was below thetarget analog voltage, or as stated above, Vtarget>Vg−Vout=Vt+Ibias*Rsource-side) have their channels coupled to a low programmingvoltage (typically by coupling the channel to ground through the bitline 204) and are subjected to additional programming pulses (at theprogramming word line voltage or at an increased programming voltage).This program and verify cycle is repeated until the target analogvoltages are successfully programmed or a selected number of iterationshave passed and the programming operation is deemed to have failed.

Unfortunately, the channel resistance of memory cells also generallyincreases as their programmed threshold voltage is changed from anerased state to fully programmed. As such, the resistance of theunselected memory cells can vary as data is stored and the NAND memorystring is programmed. This can leave the cells programmed first in avery different NAND string resistance environment than when they wereverified, changing the voltage read on the bit line in sensingoperations and materially increasing the chances of a mis-read and datacorruption. Thus, if the NAND string resistance environment can bestabilized, so that programming and verification occurs in the sameresistance environment as any subsequent reads, sensing accuracy andrepeatability should be increased. In addition, any string resistancecompensation of the programmed threshold voltages of the memory cellswill be maintained. This string resistance stabilization can beaccomplished through using a programming sequence of the memory cells ofthe string that ensures a stable resistance pattern in the unselectedcells (208 ₃₁-208 _(N+1), 208 _(N−1)-208 ₀) during programming,verifying and reading a given memory cell 208 _(N). In particular, ifthe resistance presented by the source-side unselected memory cells 208₃₁-208 _(N+1) of strings of NAND architecture memories can be maintainedthe same between the program-verify operation and later read operations,read accuracy will be increased.

One or more embodiments of the present invention therefore involveprogramming the cells in NAND memory cell strings, such as those in NANDarchitecture Flash memory arrays of NAND Flash memory devices, tomaintain the stability of the unselected cell resistance presented onthe source-side of a given selected memory cell of the NAND stringduring both verify and read. In particular, in one embodiment of thepresent invention, the cells in the NAND string are programmedsequentially in source-side order from the cell adjacent to the bit lineto the cell that is adjacent the source line. This allows the sensing ofthe verify and read operations to read the programmed threshold voltageacross the same stable source-side resistance 602, as the source-sideunselected memory cells 208 ₃₁-208 _(N+1) will already have beenprogrammed. This stable source-side unselected cell resistance maintainsthe threshold voltage compensation of the selected cell 208 _(N) for thesource-side resistance 602 of the source-side unselected memory cells208 ₃₁-208 _(N+1). It is noted that the resistance 604 of drain-sideunselected memory cells 208 _(N−1)-208 ₀ will vary in this approach dueto their later programming, but, as noted above, will not have as greatan effect on sensing accuracy as the source-side unselected memory cells602.

For example, in the embodiments of FIGS. 6A and 6B, the memory cells 208₀-208 ₃₁ of the NAND string are programmed and verified in sequence frommemory cell 208 ₃₁, closest to the bit line 204, to memory cell 208 ₀,closest to the source line 216, allowing the source-side resistance ofthe source-side unselected cells 208 ₃₁-208 _(N+1) to remain stableduring both verify and read sensing operations. It is noted that otherprogramming patterns that maintain the relative stability of theresistance of the unselected memory cells of the NAND string, such assequentially programming alternating even and odd numbered memory cellsin the NAND string or utilizing virtual ground strings or P-FET basedfloating gate memory cells with opposite source/drain configurations,are possible and will be apparent to those skilled in the art with thebenefit of the present disclosure.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe disclosure will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the disclosure.

CONCLUSION

A NAND architecture non-volatile memory device and programming processhas been described that reduce the effects of NAND string resistance insource follower sensing by programming the cells in NAND memory cellstrings to maintain the resistance presented by the unselected cells onthe source-side of a given selected memory cell of the NAND stringduring both the verify and read, maintaining the sensing environment andstring resistance compensation. In particular, in one embodiment of thepresent invention, the cells in the NAND string are programmedsequentially in order from the cells closest the bit line to the finalcell that is closest the source line in the string. This allows thesource follower sensing of the verify and later read operations to readthe programmed threshold voltage across the same stable source-sideresistance 602, as the source-side unselected memory cells 208 ₃₁-208_(N+1) will already have been programmed and thus will present the samechannel resistance to both the source follower verify of the programoperation and following source follower read operations, maintaining thecompensation for the source-side resistance 602 of the source-sideunselected memory cells 208 ₃₁-208 _(N+1).

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe invention will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the invention. It is manifestly intended that thisinvention be limited only by the following claims and equivalentsthereof.

1. A method of operating a memory, comprising: programming a thresholdvoltage of a selected memory cell in a NAND memory cell string to matcha target voltage, wherein the target voltage compensates, at least inpart, for a voltage drop across any unselected memory cells in the NANDmemory cell string on a source-side of the selected memory cell; andsensing the threshold voltage of the selected memory cell of the NANDmemory cell string to determine the programmed threshold voltage bysampling a voltage of a bit line selectively coupled to the NAND memorycell string.
 2. The method of claim 1, further comprising programmingthe plurality of memory cells of a NAND memory cell string of the memorysequentially from a first memory cell that is adjacent to a bit line toa last memory cell that is adjacent to a source line.
 3. The method ofclaim 1, further comprising programming the plurality of memory cells ofa NAND memory cell string of the memory sequentially programming theplurality of memory cells in alternating pattern of even and oddnumbered memory cells from a first even numbered memory cell that isadjacent to a bit line to a last even numbered memory cell that isadjacent to a source line, and from a first odd numbered memory cellthat is adjacent to a bit line to a last odd numbered memory cell thatis adjacent to a source line.
 4. The method of claim 1, furthercomprising: programming the plurality of non-volatile memory cells of avirtual ground NAND memory cell string of the memory sequentially from afirst memory cell that is adjacent to a first bit/source line to asecond memory cell that is adjacent to a second bit/source line, whenthe first bit/source line is configured to operate as a bit line and thesecond bit/source line is configured to operate as a source line; andprogramming the plurality of non-volatile memory cells of the virtualground NAND memory cell string of the memory sequentially from thesecond memory cell that is adjacent to the second bit/source line to thefirst memory cell that is adjacent to the first bit/source line, whenthe second bit/source line is configured to operate as a bit line andthe first bit/source line is configured to operate as a source line. 5.The method of claim 1, wherein the floating gate memory cells are P-FETbased memory cells and wherein programming the threshold voltage of theselected memory cell further comprises programming a plurality of memorycells of the NAND memory cell string of the memory sequentially from alast memory cell that is adjacent to a source line to a first memorycell that is adjacent to a bit line.
 6. The method of claim 1, whereinprogramming further comprises programming such that a NAND memory cellstring resistance environment is stabilized.
 7. The method of claim 1,wherein programming further comprises programming memory cells of theNAND memory cell string in a sequence that ensures a stable resistancepattern in the unselected cells on the source-side of a selected cell inthe NAND memory cell string during the programming and sensing acts. 8.The method of claim 1, wherein sensing the threshold voltage of theselected memory cell comprises: applying a voltage (Vsource) on a sourceline coupled to the NAND memory cell string; applying a pass voltage(Vpass) to one or more word lines coupled to control gates of one ormore unselected memory cells of the NAND memory cell string; andcoupling a read gate voltage (Vg) to a word line coupled to a controlgate of the selected memory cell of the NAND memory cell string.
 9. Themethod of claim 8, wherein sensing the threshold voltage of the selectedmemory cell further comprises sensing a voltage expressed on a coupledbit line (Vout) indicative of the read gate voltage (Vg) minus thethreshold voltage (Vt) and an IR voltage drop of a resistance of one ormore source-side unselected memory cells of the target memory cell ofthe NAND memory cell string and subtracting the voltage expressed on thecoupled bit line (Vout) from the read gate voltage (Vg).
 10. The methodof claim 1, wherein programming the threshold voltage of the selectedmemory cell in accordance with a target voltage further comprisesprogramming the memory cell until its threshold voltage is equal to orexceeds the target voltage level.
 11. The method of claim 10, whereinprogramming the selected memory cell until its threshold voltage isequal to or exceeds the target voltage level further comprises: applyingprogramming pulses to the selected memory cell to increase the thresholdvoltage of the memory cell; sensing the threshold voltage of theselected memory cell; comparing the threshold voltage of the memory cellto the target voltage level; and re-applying programming pulses to thememory cell if its threshold voltage is less than the target voltagelevel.
 12. A method of programming a voltage in memory device,comprising: programming a plurality of target non-volatile memory cellsof a NAND memory cell string, wherein a plurality of target non-volatilememory cells in the NAND memory cell string are sequentially programmedfrom a first memory cell that is adjacent to a bit line to a last memorycell that is adjacent to a source line, wherein each target non-volatilememory cell of the plurality of target memory cells of the NAND memorycell string is programmed in turn by, applying programming pulses to thetarget memory cell to program a threshold voltage of the target memorycell; sensing the threshold voltage of the target memory cell; comparingthe threshold voltage of the target memory cell to a target voltagelevel; and applying programming pulses to the target memory cell if itsthreshold voltage is less than the target voltage level.
 13. The methodof claim 12, wherein sensing the threshold voltage of the target memorycell comprises: applying a voltage (Vsource) on the source line coupledto the NAND memory cell string; applying a pass voltage (Vpass) to oneor more word lines coupled to control gates on one or more unselectedmemory cells of the NAND memory cell string, and applying a read gatevoltage (Vg) to a word line coupled to a control gate of the targetmemory cell of the NAND memory cell string; and sensing a voltage levelindicative of the threshold voltage of the target memory cell on a bitline.
 14. A method of programming a voltage in memory device,comprising: programming a plurality of target non-volatile memory cellsof a NAND memory cell string, wherein a plurality of target non-volatilememory cells in the NAND memory cell string are sequentially programmedfrom a first memory cell that is adjacent to a bit line to a last memorycell that is adjacent to a source line, wherein each target non-volatilememory cell of the plurality of target memory cells of the NAND memorycell string is programmed in turn by, applying programming pulses to thetarget memory cell to program a threshold voltage of the target memorycell; sensing the threshold voltage of the target memory cell; comparingthe threshold voltage of the target memory cell to a target voltagelevel; and applying programming pulses to the target memory cell if itsthreshold voltage is less than the target voltage level; whereinprogramming each target non-volatile memory cell of the plurality oftarget memory cells of the NAND memory cell string further comprisescompensating for a voltage drop due to resistance of source-sideunselected memory cells of the NAND string when programming the targetvoltage level into the target memory cell.
 15. A memory device,comprising: a NAND architecture memory array; and circuitry for controland/or access of memory cells of the NAND architecture memory array;wherein the memory device is adapted to program a plurality of memorycells of a NAND memory cell string, where a threshold voltage of eachmemory cell of the plurality of memory cells of the NAND memory cellstring is programmed in accordance with a target voltage, and where theprogrammed threshold voltage of the memory cell is verified against thetarget analog voltage; and wherein the memory device is further adaptedto program the plurality of memory cells of the NAND memory cell stringsequentially from a first memory cell that is adjacent to a bit line toa last memory cell that is adjacent to a source line.
 16. The memorydevice of claim 15, wherein the memory device is adapted to sense athreshold voltage from a selected memory cell of a NAND memory cellstring of the NAND memory array by, coupling the NAND memory cell stringto a bit line and a source line, applying a voltage (Vsource) on thesource line, applying a pass voltage (Vpass) to one or more word linescoupled to control gates on one or more unselected memory cells of theNAND string, and applying a gate voltage (Vg) to a word line coupled toa control gate of the selected memory cell.
 17. The memory device ofclaim 15, wherein the memory device is adapted to program a selectedmemory cell in a program and verify cycle by, applying a programmingvoltage to the control gate of the selected memory cell and a programlow voltage to the channel of the selected memory cell, sensing thethreshold voltage of the selected memory cell, comparing the sensedthreshold voltage of the selected memory cell to a desired thresholdvoltage of the selected memory cell, and applying a further programcycle of program voltages to the gate and channel of the selected memorycell if the sensed threshold voltage is less than the desired thresholdvoltage.
 18. A memory device, comprising: a NAND architecture memoryarray; and circuitry for control and/or access of memory cells of theNAND architecture memory array; wherein the memory device is adapted toprogram a plurality of memory cells of a NAND memory cell string, wherea threshold voltage of each memory cell of the plurality of memory cellsof the NAND memory cell string is programmed in accordance with a targetvoltage, and where the programmed threshold voltage of the memory cellis verified against the target analog voltage; wherein the memory deviceis further adapted to program the plurality of memory cells of the NANDmemory cell string sequentially from a first memory cell that isadjacent to a bit line to a last memory cell that is adjacent to asource line; and wherein a voltage expressed on the coupled bit line isindicative of the gate voltage (Vg) minus the threshold voltage (Vt) ofthe selected memory cell of the NAND memory cell string and a voltagedrop of a resistance across one or more side unselected memory cells ona source-side of the selected memory cell in the NAND memory cellstring.
 19. A storage device, comprising: a memory device; a controllerfor communicating with an external device; and a read/write channelcoupled to the controller and the memory device; wherein the storagedevice is adapted to program a plurality of memory cells of a NANDmemory cell string of one or more NAND memory cell strings of a memoryarray of the memory device, where a threshold voltage of each memorycell of the NAND memory cell string is programmed to match a target datasignal and the programmed threshold voltage of each non-volatile memorycell is verified against the associated target data signal by sensing ofthe programmed threshold voltage; and wherein the storage device isadapted to program the plurality of non-volatile memory cells of theNAND memory cell string sequentially from a first memory cell that isadjacent to a bit line to a last memory cell that is adjacent to asource line.
 20. The storage device of claim 19, wherein the memorydevice is adapted to read a threshold voltage from one or more selectedmemory cells of the one or more NAND memory cell strings of the memoryarray of the memory device by, coupling each NAND string to a bit lineand a source line, applying a voltage (Vsource) on the source line,applying a pass voltage (Vpass) to one or more word lines coupled tocontrol gates on one or more unselected memory cells of each NANDstring, and applying a gate voltage (Vg) to a word line coupled to acontrol gate of the selected memory cell of each NAND string.
 21. Thestorage device of claim 19, wherein the storage device is adapted toprogram a plurality of memory cells of a NAND memory cell string the oneor more NAND memory cell strings of the memory array of the memorydevice until their threshold voltages are equal to or exceed theassociated target data signals in a program and verify cycle by,programming the selected memory cells in a program cycle by applying aprogramming voltage to their control gates and a program low voltage totheir channels, sensing the threshold voltages of the selected memorycells, comparing the threshold voltage of the selected memory cells tothe associated target data signal, and applying a further program cycleto a memory cell of the selected memory cells if the memory cell and thevoltage drop of the associated source-side unselected memory cells isfound to be less than the associated target data signal.
 22. A storagedevice, comprising: a memory device; a controller for communicating withan external device; and a read/write channel coupled to the controllerand the memory device; wherein the storage device is adapted to programa plurality of memory cells of a NAND memory cell string of one or moreNAND memory cell strings of a memory array of the memory device, where athreshold voltage of each memory cell of the NAND memory cell string isprogrammed to match a target data signal and the programmed thresholdvoltage of each non-volatile memory cell is verified against theassociated target data signal by sensing of the programmed thresholdvoltage; wherein the storage device is adapted to program the pluralityof non-volatile memory cells of the NAND memory cell string sequentiallyfrom a first memory cell that is adjacent to a bit line to a last memorycell that is adjacent to a source line; wherein the memory device isadapted to read a threshold voltage from one or more selected memorycells of the one or more NAND memory cell strings of the memory array ofthe memory device by coupling each NAND string to a bit line and asource line, applying a voltage (Vsource) on the source line, applying apass voltage (Vpass) to one or more word lines coupled to control gateson one or more unselected memory cells of each NAND string, and applyinga gate voltage (Vg) to a word line coupled to a control gate of theselected memory cell of each NAND string; and wherein the memory deviceis further adapted to generate data signals from a read operation fortransmission having voltage levels indicative of threshold voltages ofone or more selected memory cells by reading a voltage expressed on acoupled bit line (Vout) indicative of the gate voltage (Vg) minus thethreshold voltage (Vt) of each memory cell of the one or more selectedmemory cells and a voltage drop of a source-side resistance, subtractingthe voltage expressed on the coupled bit line (Vout) from the gatevoltage (Vg) to get a voltage indicative of the threshold voltage (Vt)of each memory cell of the one or more selected memory cells and theassociated voltage drop of their source-side resistance.